Product Summary

The BC184C is a silicon NPN small signal transistor.

Parametrics

BC184C absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 45 V; (2)Collector-Emitter Voltage, VCEO: 30 V; (3)Emitter-Base Voltage, VEBO: 5 V; (4)Collector Current (DC), IC: 500 mA; (5)Collector Dissipation (Ta=25℃), PC: 350 mW; (6)Junction Temperature, TJ: 150℃; (7)Storage Temperature, TSTG: -55 ~ 150℃.

Features

BC184C features: (1)Collector-Base Voltage, IC = 10μA, BVCBO: 45 V; (2)Collector-Emitter Voltage, IC = 2mA, BVCEO: 30 V; (3)Emitter-Base Voltage, IE = 10μA, BVEBO: 5 V; (4)Collector Cut-off Current, VCB = 30V, ICBO: 15 nA; (5)Emitter Cut-off Current, VEB = 4V, IEBO: 15 nA; (6)DC Current Gain, VCE = 5V, IC = 10μA, hFE: 100 to 800; VCE = 5V, IC = 2mA, hFE: 250 to 800; VCE = 5V, IC = 100mA, hFE: 130 to 800; (7)Collector-Emitter Saturation Voltage, IC = 10mA, IB = 0.5mA, VCE(sat):0.6V; IC = 100mA, IB = 5mA, VCE(sat)0.25V; (8)Base-Emitter Saturation Voltage, IC = 100mA, IB = 5mA, VBE(sat): 1.2 V; (9)Base-Emitter On Voltage, VCE = 5V, IC = 2mA, VBE(on): 0.55 to 0.7 V; (10)Output Capacitance, VCE = 10V, f = 1MHz COB: 5 pF; (11)Current gain Bandwidth Product, VCE = 5V, IC = 10mA, f = 100MHz; (12)fT: 150 MHz; (13)Small Signal Current Gain, VCE = 5V, IC = 2mA, f = 1KHz, hFE: 240 to 900; (14)NF Noise Figure VCE = 5V, IC = 200mA, RG = 2KΩ, f = 30Hz~15KHz, hFE: 4dB; VCE = 5V, IC = 200μA, f = 1KHz, hFE: 4dB.

Diagrams

BC184C package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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BC184C
BC184C

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN 45V 500mA HFE/8

Data Sheet

Negotiable 
BC184C_J35Z
BC184C_J35Z

Fairchild Semiconductor

Transistors Bipolar (BJT) TO-92 REVERSE MOLD

Data Sheet

Negotiable 
BC184C_Q
BC184C_Q

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN 45V 500mA HFE/8

Data Sheet

Negotiable