(China (Mainland))
Product Summary
The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life? (MoBL?) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when: ? Deselected (CE HIGH) ? Outputs are disabled (OE HIGH) ? Write operation is active (CE LOW and WE LOW) To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A18). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins
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 CY62148ELL-45ZSXI |
Cypress Semiconductor |
SRAM 4M MoBL Ultra LO Pwr HI SPD Micropwr IND |
Data Sheet |
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CY62148ELL-45ZSXIT |
Cypress Semiconductor |
SRAM 4M MoBL Ultra LO Pwr HI SPD Micropwr IND |
Data Sheet |
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