(China (Mainland))
Product Summary
The G15N60HS is a high speed igbt.
Parametrics
G15N60HS absolute maximum ratings: (1)Collector-emitter voltage VCE: 600V; (2)DC collector current TC = 25°C IC: 27A; (3)DC collector current TC = 100°C IC: 15A; (4)Pulsed collector current, tp limited by Tjmax ICpul s: 60A; (5)Turn off safe operating area VCE ≤ 600V, Tj ≤ 150℃: 60A; (6)Gate-emitter voltage static transient VGE: ±20V; (7)Gate-emitter voltage transient (tp<1μs, D<0.05)VGE: ±30V; (8)Short circuit withstand time2)VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC: 10 μs; (9)Power dissipation TC = 25°C Pt o t: 138 W; (10)Operating junction and storage temperature Tj ,Ts tg: -55...+150℃; (11)Time limited operating junction temperature for t < 150h Tj ( t l ): 175℃; (12)Soldering temperature (reflow soldering, MSL1): 245℃.
Features
G15N60HS features: (1)30% lower Eoff compared to previous generation; (2)Short circuit withstand time – 10 μs; (3)Designed for operation above 30 kHz; (4)NPT-Technology for 600V applications offers: parallel switching capability, moderate Eoff increase with temperature, very tight parameter distribution; (5)High ruggedness, temperature stable behaviour; (6)Pb-free lead plating; RoHS compliant; (7)Qualified according to JEDEC1 for target applications; (8)Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/.
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