(China (Mainland))
Product Summary
The IRFPE50 is a HEXFET power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device disign, low on-resistance and cost-effectiveness. The IRFPE50 also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Parametrics
IRFPE50 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 7.8 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 4.9 A; (3)IDM, Pulsed Drain Current: 31 A; (4)PD @TC = 25℃, Power Dissipation: 190 W; (5)Linear Derating Factor: 1.5 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energyb: 770 mJ; (8)IAR Avalanche current: 7.8 A; (9)EAR Repetitive Avalanche Energy: 19 mJ; (10)dv/dt Peak Diode Recovery: 2.0V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 150℃; (12)Soldering Temperature for 10 seconds: 300℃; (13)Mounting Torque, 6-32 or M3 Screw: 10lb·in (1.1N·m).
Features
IRFPE50 features: (1)Dynamic dv/dt rating; (2)Repetitive avalanche rated; (3)Isolated central mounting hole; (4)Fast switching; (5)Ease of paralleling; (6)Simple drive requirements.
Diagrams
<IMG alt="IRFPE50 diagram" src="http://www.seekic.com/uploadfile/ic-mfg/2012832255529.jpg" border=0>
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Pricing (USD) |
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 IRFPE50 |
Vishay/Siliconix |
MOSFET N-Chan 800V 7.8 Amp |
Data Sheet |
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IRFPE50, SiHFPE50 |
Other |
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Data Sheet |
Negotiable |
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IRFPE50PBF |
Vishay/Siliconix |
MOSFET N-Chan 800V 7.8 Amp |
Data Sheet |
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