(China (Mainland))
Product Summary
Power MOS 8? is a high speed, high voltage N-channel switch-mode power MOSFET.A proprietary planar stripe design yields excellent reliability and manufacturability. Lowswitching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structurehelp control slew rates during switching, resulting in low EMI and reliable paralleling,even when switching at very high frequency. Reliability in ?yback, boost, forward, andother circuits is enhanced by the high avalanche energy capability.
Features
? Fast switching with low EMI/RFI
? Low RDS(on)
? Ultra low Crss for improved noise immunity
? Low gate charge
? Avalanche energy rated
? RoHS compliant
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 APT18M100B |
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MOSFET N-CH 1000V 18A TO-247 |
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APT1001R1AN |
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APT1001R1AVR |
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Negotiable |
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APT1001R1BN |
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Data Sheet |
Negotiable |
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APT1001R1BVFR |
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Negotiable |
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APT1001R1HN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1HVR |
Other |
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Data Sheet |
Negotiable |
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