Product Summary

The B2535LG is a D2PAK power rectifier. The B2535LG employs the Schottky Barrier principle in a large metal－to－silicon power diode. State－of－the－art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.

Parametrics

B2535LG absolute maximum ratings: (1)Average Rectified Forward Current, (Rated VR, TC = 110°C)IF(AV): 12.5 A; (2)Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90°C)IFRM: 25 A; (3)Non－Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM: 150 A; (4)Peak Repetitive Reverse Surge Current (2.0 μs, 1.0 kHz)IRRM: 1.0 A; (5)Storage Temperature Range Tstg: —65 to +150 ℃; (6)Operating Junction Temperature TJ: —65 to +125 ℃; (7)Voltage Rate of Change (Rated VR)dv/dt: 10,000 V/μs.

Features

B2535LG features: (1)Center－Tap Configuration; (2)Guardring for Stress Protection; (3)Low Forward Voltage; (4)125°C Operating Junction Temperature; (5)Epoxy Meets UL 94, V—0 @ 0.125 in; (6)Short Heatsink Tab Manufactured—Not Sheared; (7)Similar in Size to the Industry Standard TO—220 Package; (8)Pb—Free Packages are Available.

Diagrams

B2535LG dimension