(China (Mainland))
Product Summary
The BSS125 is a SIPMOS small-signal transistor.
Parametrics
BSS125 absolute maximum ratings: (1) Drain source voltage VDS: 600V; (2) Drain-gate voltage RGS = 20kΩ VDGR: 600V; (3) Gate source voltageVGS± 14Gate-source peak voltage,aperiodic Vgs: ±20V; (4) Continuous drain currentTA = 35 °C ID: 0.1A; (5) DC drain current, pulsedTA = 25 °C IDpuls: 0.4A; (6) Power dissipationTA = 25 °CPtot: 1W.
Features
BSS125 features: (1)N channel; (2)Enhancement mode; (3)VGS(th) = 1.5, 2.5 V.
Diagrams
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 BSS100 |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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BSS100_D75Z |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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BSS101 |
Other |
|
Data Sheet |
Negotiable |
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BSS110 |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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BSS110_D27Z |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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BSS110_L34Z |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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