(China (Mainland))
Product Summary
The FMG2G100US60 is a Insulated Gate Bipolar Transistor (IGBT) power module. The FMG2G100US60 is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Parametrics
FMG2G100US60 absolute maximum ratings: (1)Collector-Emitter Voltage:V; (2)Gate-Emitter Voltage:± 20 V; (3)Collector Current :100 A; (4)Pulsed Collector Current:200 A; (5)Diode Continuous Forward Current:100 A; (6)Diode Maximum Forward Current:200 A; (7)Short Circuit Withstand Time:10 us; (8)Maximum Power Dissipation:400 W; (9)Operating Junction Temperature:-40℃ to +150℃; (10)Storage Temperature Range:-40℃ to +125℃; (11)Isolation Voltage:2500 V.
Features
FMG2G100US60 features: (1)UL Certified No. E209204; (2)Short Circuit rated 10us @ TC = 100℃, VGE = 15V; (3)High Speed Switching; (4)Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A; (5)High Input Impedance; (6)Fast & Soft Anti-Parallel FWD.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FMG2G100US60 |
Fairchild Semiconductor |
IGBT Modules 600V/100A/2 |
Data Sheet |
Negotiable |
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FMG2G100US60_Q |
Fairchild Semiconductor |
IGBT Transistors 600V/100A/2 |
Data Sheet |
Negotiable |
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