Product Summary
The RZQ050P01TR is a 1.5V drive pch MOSFET. The RZQ050P01TR is specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The RZQ050P01TR is not designed to be radiation tolerant.
Parametrics
RZQ050P01TR absolute maximum ratings: (1)Drain-source voltage VDSS: -12V; (2)Gate-source voltage VGSS: ±10V; (3)Drain current Continuous ID: ±5A; (4)Drain current Pulsed ISP1: ±20A; (5)Source current (Body diode)Continuous IS: -1A; (6)Source current (Body diode)Pulsed ISP1: -20A; (7)Total power dissipation PD2: 1.25W; (8)Channel temperature Tch: 150℃; (9)Range of Storage temperature Tstg: -55 to +150℃.
Features
RZQ050P01TR features: (1)Low on-resistance;(2)High power package;(3)Low voltage drive.(1.5V).
Diagrams
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![]() MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -5A |
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![]() RZQ045P01TR |
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![]() MOSFET P Chan-12V+/-4.5A 1.5V Drive |
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![]() RZQ050P01TR |
![]() ROHM Semiconductor |
![]() MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -5A |
![]() Data Sheet |
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