(China (Mainland))
Product Summary
The HM1-6551B883 is a 256 x 4 static CMOS RAM. The HM1-6551B883 is fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM1-6551B883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
Parametrics
HM1-6551B883 absolute maximum ratings: (1)Supply Voltage: +7.0V; (2)Input, Output or I/O Voltage: GND -0.3V to VCC +0.3V; (3)ESD Classification: Class 1.
Features
HM1-6551B883 features: (1)Low Power Standby: 50μW Max; (2)Low Power Operation: 20mW/MHz Max; (3)Fast Access Time: 220ns Max; (4)Data Retention: at 2.0V Min; (5)TTL Compatible Input/Output; (6)High Output Drive - 1 TTL Load; (7)Internal Latched Chip Select; (8)High Noise Immunity; (9)On-Chip Address Register; (10)Latched Outputs; (11)Three-State Output.
Diagrams
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 HM1-5067 |
FCI |
Hard Metric Connectors 5X24 PFMS VER INS TOOL |
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HM1-65642-9 |
Intersil |
IC RAM 8192X8 5V 150NS 28-DIP |
Data Sheet |
Negotiable |
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