Product Summary

The RFP40N10 is an N-Channel power MOSFET. The RFP40N10 is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP40N10 was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Parametrics

RFP40N10 absolute maximum ratings: (1)Drain to Source Breakdown Voltage (Note 1)VDSS: 100 V; (2)Drain to Gate Voltage (RGS = 1MW)(Note 1)VDGR; 100 V; (3)Gate to Source Voltage VGS: ±20 V; (4)Drain Current Continuous (Figure 2)ID: 40A; (5)Pulsed Drain Current (Note 2)IDM: 100A; (6)Pulsed Avalanche Rating EAS: Figures 4, 12, 13; (7)Power Dissipation PD: 160W; (8)Operating and Storage Temperature TJ, TSTG: －55 to 175 ℃; (9)Maximum Temperature for Soldering; (10)Leads at 0.063in (1.6mm)from case for 10s TL: 300℃ ; (11)Package Body for 10s, see Techbrief 334 Tpkg: 260℃ .

Features

RFP40N10 features: (1)40A, 100V; (2)rDS(ON)= 0.040W; (3)UIS Rating Curve; (4)SOA is Power Dissipation Limited; (5)175oC Operating Temperature; (6)Related Literature: TB334 Guidelines for Soldering Surface Mount Components to PC Boards.

Diagrams

RFP40N10 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
RFP40N10
RFP40N10
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
RFP40N10_Q
RFP40N10_Q
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
RFP40N10LE
RFP40N10LE
Other

Data Sheet
Negotiable