Product Summary

The FDS4435BZ is a 30 Volt P-Channel PowerTrench MOSFET. This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device FDS4435BZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Parametrics

FDS4435BZ absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±25 V; (3)ID, Drain Current – Continuous: 8.8A; Pulsed: 50 A; (4)PD, Power Dissipation for Single Operation: 2.5 W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: –55 to +150℃.

Features

FDS4435BZ features: (1)–8.8 A, –30 V. RDS(ON) = 20 m? @ VGS = –10 V, RDS(ON) = 35 mΩ @ VGS = – 4.5 V; (2)Extended VGSS range (–25V) for battery applications; (3)HBM ESD protection level of ±4.5 kV typical; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability; (6)Termination is Lead-free and RoHS compliant.

Diagrams

FDS4435BZ pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS4435BZ
FDS4435BZ
Fairchild Semiconductor
MOSFET 30V.PCH POWER TRENCH MOSFET
Data Sheet
0-1: $0.48
1-25: $0.37
25-100: $0.32
100-250: $0.28
FDS4435BZ_F085
FDS4435BZ_F085
Fairchild Semiconductor
MOSFET 30V P-Chan PowerTrench
Data Sheet
0-1: $0.92
1-25: $0.80
25-100: $0.74
100-250: $0.64