Product Summary

The LD242-3 is a GaAs Infrared Emitter.

Parametrics

LD242-3 absolute maximam ratings: (1)Operating and storage temperature range Top; Tstg: – 40… + 80°C; (2)voltage VR: 5V; (3)Forward current IF: 300mA; (4) Stobstrom,τ ≤ 10 μs, D =0 Surge current IFSM: 3A; (5)Power dissipation Ptot: 470mW; (6)Thermal resistance RthJA, RthJC: 450K/W, 160K/W.

Features

LD242-3 features:(1) Fabricated in a liquid phase epitaxy process; (2) Cathode is electrically connected to the case; (3) High reliability; (4) Wide beam; (5) Same package as BP 103, BPX 63, SFH 464,SFH 483; (6) DIN humidity caregory in acc. withDIN 40 040 GQG.

Diagrams

 LD242-3 dimension

LD242
LD242

Other


Data Sheet

Negotiable