(China (Mainland))
Product Summary
The MRF329 is an npn silicon rf power transistor.
Parametrics
MRF329 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 30 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current Continuous IC: 9.0Adc; (5)Collector Current Peak IC: 12Adc; (6)Total Device Dissipation @ TC = 25°C (1)Derate above 25°C PD: 270Watts, 1.54W/°C; (7)Storage Temperature Range Tstg –65 to +150 °C.
Features
MRF329 features: (1)Specified 28 Volt, 400 MHz Characteristics: Output Power = 100 Watts, Minimum Gain = 7.0 dB; (2)Efficiency = 50% (Min); (3)Built–In Matching Network for Broadband Operation Using Double Match Technique; (4)100% Tested for Load Mismatch at all Phase Angles with 3: 1 VSWR; (5)Gold Metallization System for High Reliability.
Diagrams
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 MRF329 |
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